Hole-spin pumping and repumping in a p-type δ-doped InAs quantum dot

نویسندگان

  • Konstantinos G. Lagoudakis
  • Kevin A. Fischer
  • Tomas Sarmiento
  • Kai Mueller
  • Jelena Vučković
چکیده

We have grown high quality p-type δ-doped InAs quantum dots and have demonstrated coherent spin pumping and repumping of a hole spin in a positively charged quantum dot by means of a single-laser driving scheme under a high magnetic field in the Voigt configuration. Modeling of our system shows excellent qualitative agreement with the experimental findings and further explores the performance of the single-laser scheme for spin pumping and repumping.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Optically driven spin memory in n-doped InAs-GaAs quantum dots.

We show that the spin state of the resident electron in an n-doped self-assembled InAs-GaAs quantum dot can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counterpolarized photoluminescence.

متن کامل

Spin Dynamics of Electrons and Holes in p-Doped InAs/GaAs Quantum Dots

We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum dots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation down to 1/3 of its initial value with a characteristic time of T∆ ≈ 500ps. We attribute this decay to the hyperfine interaction of the electron spin with randomly orientated nuclear spins. Magnet...

متن کامل

Hole-nuclear spin interaction in quantum dots.

We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe and time-resolved photoluminescence experiments. We obtained experimental evidence of the hyperfine interaction between hole and nuclear spins. In the absence of an external magnetic field, our calculations based on dipole-dipole coupling between the hole and the quantum dot nuclei lead to a hole-spin dep...

متن کامل

Dephasing of excitons and multiexcitons in undoped and p-doped InAs/GaAs quantum dots-in-a-well

We report an experimental investigation of the dephasing of excitons and multiexcitons in technologically relevant undoped and p-doped InAs/GaAs dot-in-a-well structures emitting near 1.3 m wavelength. Using a transient four-wave mixing technique in heterodyne detection, we measured the excitonic dephasing due to phonon coupling in the temperature range from 5 to 300 K, and the multiexcitonic d...

متن کامل

Optically probing the fine structure of a single Mn atom in an InAs quantum dot.

We report on the optical spectroscopy of a single InAs/GaAs quantum dot doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A0 whose effective spin J=1 is significantly perturbed by the quantum dot potential and its associated strain field. The spin interaction with photocarriers injected in the quantum ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2014